DocumentCode
513712
Title
Hot-Carrier Thermal Conductivity for Hydrodynamic Analyses
Author
Brunetti, R. ; Golinelli, P. ; Reggiani, L. ; Rudan, M.
Author_Institution
Dipartimento di Fisica UniversitÃ\xa0 di Modena e INFM, Via Campi 213/A, I-41100 Modena, Italy
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
829
Lastpage
832
Abstract
We present a theoretical and computational analysis of the anisotropy properties of the hot-carrier thermal conductivity in semiconductors as a function of the electric-field strength and direction, suitable to be used in the hydrodynamic model. Numerical results have been obtained for electrons in silicon at 77 K and 300 K through the use of a Monte Carlo simulator which includes an appropriate physical model for the field range considered.
Keywords
Anisotropic magnetoresistance; Electrons; Hot carriers; Hydrodynamics; Integral equations; Monte Carlo methods; Silicon; Tellurium; Tensile stress; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435977
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