Title :
Hot-Carrier Thermal Conductivity for Hydrodynamic Analyses
Author :
Brunetti, R. ; Golinelli, P. ; Reggiani, L. ; Rudan, M.
Author_Institution :
Dipartimento di Fisica UniversitÃ\xa0 di Modena e INFM, Via Campi 213/A, I-41100 Modena, Italy
Abstract :
We present a theoretical and computational analysis of the anisotropy properties of the hot-carrier thermal conductivity in semiconductors as a function of the electric-field strength and direction, suitable to be used in the hydrodynamic model. Numerical results have been obtained for electrons in silicon at 77 K and 300 K through the use of a Monte Carlo simulator which includes an appropriate physical model for the field range considered.
Keywords :
Anisotropic magnetoresistance; Electrons; Hot carriers; Hydrodynamics; Integral equations; Monte Carlo methods; Silicon; Tellurium; Tensile stress; Thermal conductivity;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
