DocumentCode
513715
Title
Noise Investigations on MESFETs Transplanted by Epitaxial Lift Off
Author
Morf, T. ; Brys, C. ; Pollentier, I. ; De Dobbelaere, P. ; Daele, P. ; Demeester, P. ; Bachtold, W.
Author_Institution
Swiss Federal Institute of Technology, Laboratory for Electromagnetic Fields and Microwave Electronics, Gloriastr. 35, CH 8092 Zÿrich, Switzerland
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
157
Lastpage
160
Abstract
In this paper we present the results of RF and noise measurements on MESFETs transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently re-attached to a new host substrate. [1,2]. Gate leakage current as well as noise and RF characteristics of MESFETs and GaAs circuits are compared before and after ELO.
Keywords
Electromagnetic interference; Gallium arsenide; Indium phosphide; MESFETs; Microwave technology; Noise figure; Noise measurement; Optical noise; Radio frequency; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5435982
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