DocumentCode
513721
Title
Self-Aligned Metal/IDP Si Bipolar Technology with 12-ps ECL and 45-GHz Dynamic Frequency Divider
Author
Washio, Katsuyoshi ; Ohue, Eiji ; Tanabe, Masamichi ; Onai, Takahiro
Author_Institution
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo 185, Japan
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
807
Lastpage
810
Abstract
A self-aligned stacked metal/IDP (SMI) Si bipolar transistor technology that offers low base resistance with shallow impurity profiles is described. This technology makes it possible to obtain ultra-high-speed operation with a 12-ps gate-delay ECL and a 45-GHz dynamic frequency divider. These measured data are the best yet reported for Si technology.
Keywords
Capacitance; Contact resistance; Cutoff frequency; Electrodes; Fabrication; Frequency conversion; Laboratories; Space technology; Thermal resistance; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435989
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