• DocumentCode
    513736
  • Title

    Low Temperature Dependence of the Device Parameters of Separate Absorption, Grading, Charge and Multiplication InP/InGaAs Avalanche Photodiodes

  • Author

    An, S. ; Deen, MJ ; Tarof, L.

  • Author_Institution
    School of Engineering Science, Simon Fraser University, Burnaby, B.C. Canada V5A 1S6
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    781
  • Lastpage
    784
  • Abstract
    Temperature dependent studies of planar Separate Absorption, Grading, Charge and Multiplication (SAGCM) avalanche photodiodes (APD´s) in the range of 4.7 to 300K were conducted. From the measured breakdown (VBR) and punchthrough (VMESA) voltages, we extracted the following device parameters - total active charge density in the active central region (¿), electron (¿) and hole (ß) ionization coefficients, multiplication coefficient (ß/¿), depletion voltage (Vdepleted), and electric field distribution as a function of low temperatures.
  • Keywords
    Absorption; Avalanche photodiodes; Breakdown voltage; Charge measurement; Current measurement; Density measurement; Indium gallium arsenide; Indium phosphide; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513736