• DocumentCode
    513737
  • Title

    BCD Technologies for VLSI Smart Power ICs

  • Author

    Contiero, Claudio

  • Author_Institution
    SGS-THOMSON Microelectronics, Via Tolomeo 1, 20010 Cornaredo (Milano), ITALY
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    This paper describes a smart power bipolar-CMOS-DMOS (BCD) technology called BCD III designed at 1.2¿ for single chip system integration. This technology, besides providing bipolar, CMOS and DMOS functions, offers the possibility to implement on the same chip EPROM and EEPROM non-volatile memories. A practical example of a complete system realized in a single chip solution using BCD III is also reported.
  • Keywords
    CMOS logic circuits; CMOS technology; EPROM; Integrated circuit technology; Isolation technology; Power integrated circuits; Space technology; Thermal resistance; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5436008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513737