• DocumentCode
    513739
  • Title

    Use of Gain Non-Linearities in Two-Terminal Edge-Coupled InGaAs/InP Heterojunction Phototransistors

  • Author

    Van de Casteele, J. ; Vilcot, J.P. ; Gouy, J.P. ; Rolland, P.A. ; Decoster, D.

  • Author_Institution
    Institut d´´Electronique et de Microélectronique du Nord (I.E.M.N.), UMR CNRS 9929, Avenue Poincaré - BP69 - 59652 Villeneuve d´´Ascq Cedex, France
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    777
  • Lastpage
    780
  • Abstract
    We use the gain non-linearities at low optical power of edge coupled InGaAs/InP Heterojunction Bipolar Phototransistor to mix the optical demodulation products of two (or more) laser beams. One beam could be CW or low frequency range modulated since the other one is RF or microwave modulated. Relative experiments carried out for 2GHz and 2kHz show the mixing of the two demodulated electrical signals in the phototransistor.
  • Keywords
    Demodulation; Heterojunctions; Indium gallium arsenide; Indium phosphide; Laser beams; Optical coupling; Optical mixing; Optical modulation; Phototransistors; Power lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513739