Title :
Use of Gain Non-Linearities in Two-Terminal Edge-Coupled InGaAs/InP Heterojunction Phototransistors
Author :
Van de Casteele, J. ; Vilcot, J.P. ; Gouy, J.P. ; Rolland, P.A. ; Decoster, D.
Author_Institution :
Institut d´´Electronique et de Microélectronique du Nord (I.E.M.N.), UMR CNRS 9929, Avenue Poincaré - BP69 - 59652 Villeneuve d´´Ascq Cedex, France
Abstract :
We use the gain non-linearities at low optical power of edge coupled InGaAs/InP Heterojunction Bipolar Phototransistor to mix the optical demodulation products of two (or more) laser beams. One beam could be CW or low frequency range modulated since the other one is RF or microwave modulated. Relative experiments carried out for 2GHz and 2kHz show the mixing of the two demodulated electrical signals in the phototransistor.
Keywords :
Demodulation; Heterojunctions; Indium gallium arsenide; Indium phosphide; Laser beams; Optical coupling; Optical mixing; Optical modulation; Phototransistors; Power lasers;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
