• DocumentCode
    513742
  • Title

    Novel MSM-2DEG PD/HEMT Photoreceiver for 10Gbit/s Operation

  • Author

    Horstmann, M. ; Muttersbach, J. ; van der Hart, A. ; Schimpf, K. ; Marso, M. ; Kordos, P. ; Lüth, H.

  • Author_Institution
    Institute of Thin Film and Ion Technology, Research Centre Jÿlich, D-52425 Jÿlich
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    773
  • Lastpage
    776
  • Abstract
    A monolithic integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission systems is presented. The photoreceiver consists of a MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. The design considerations, preparation procedure and electronic properties of discrete devices and results on a front-end receiver at 1.3¿m wavelength are presented. The MSM-2DEG photodetector exhibits a 0.21A/W responsivity and a 16GHz bandwidth. The HEMT amplifiers have 45/85GHz fT/fmax. A bandwidth of 7GHz is measured on a front-end photoreceiver circuit.
  • Keywords
    Absorption; Bandwidth; Circuits; Epitaxial growth; HEMTs; Indium gallium arsenide; Indium phosphide; Insulation; Photodetectors; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513742