DocumentCode
513744
Title
On the Optimisation of SiGe-Base Bipolar Transistors
Author
Hueting, R.J.E. ; Slotboom, J.W. ; Pruijmboom, A. ; de Boer, W.B. ; Timmering, C.E. ; Cowern, N.
Author_Institution
ECTM/DIMES Delft University of Technology, Delft, The Netherlands
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
59
Lastpage
62
Abstract
Extensive computer simulations of NPN SiGe-base bipolar transistors were performed to examine the effect of the Ge profile in the electrical characteristics. It is shown that extra charge storage in the emitter-base (E-B) junction, caused by the Ge profile, affects the device performance considerably. In addition, it is shown that an abrupt Ge profile in the middle of the base region is optimal for a given critical layer thickness of approximately 600A.
Keywords
Bipolar transistors; Capacitance; Computer simulation; Cutoff frequency; Electric variables; Electron emission; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5436015
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