• DocumentCode
    513745
  • Title

    Electric Field Dependence of Charge Build-up Mechanisms and Breakdown Phenomena in Thin Oxides During Fowler-Nordheim Injection

  • Author

    Vincent, E. ; Papadas, C. ; Ghibaudo, G.

  • Author_Institution
    SGS-THOMSON Microelectronics, Central R&D, BP 16, 38921 Crolles, France; Lab. de Physique des Composants Ã\xa0 Semiconducteurs, BP 257, 38016 Grenoble, France
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    767
  • Lastpage
    770
  • Abstract
    The electric field dependence of the charge build-up mechanisms and its correlation to breakdown phenomena in thin oxides during Fowler-Nordheim electron injections has been investigated. The charge to breakdown decrease versus the electric field has been quantitatively attributed to the increase of the trapping efficiency, for various oxide thicknesses ranging between 5.5 nm and 10 nm. A relationship between the trapping efficiency and the stressing current density has been obtained which allows the accurate prediction of the time to breakdown at various stress levels, as has been inferred by Constant Current Stress (CCS) experiments. Moreover, these results suggest that the CCS time to breakdown follows a ``1/E´´ model in agreement with the bulk oxide trapping processes.
  • Keywords
    Anodes; Carbon capture and storage; Current density; Degradation; Electric breakdown; Electron emission; Electron traps; Microelectronics; Stress; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436016