DocumentCode
513745
Title
Electric Field Dependence of Charge Build-up Mechanisms and Breakdown Phenomena in Thin Oxides During Fowler-Nordheim Injection
Author
Vincent, E. ; Papadas, C. ; Ghibaudo, G.
Author_Institution
SGS-THOMSON Microelectronics, Central R&D, BP 16, 38921 Crolles, France; Lab. de Physique des Composants Ã\xa0 Semiconducteurs, BP 257, 38016 Grenoble, France
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
767
Lastpage
770
Abstract
The electric field dependence of the charge build-up mechanisms and its correlation to breakdown phenomena in thin oxides during Fowler-Nordheim electron injections has been investigated. The charge to breakdown decrease versus the electric field has been quantitatively attributed to the increase of the trapping efficiency, for various oxide thicknesses ranging between 5.5 nm and 10 nm. A relationship between the trapping efficiency and the stressing current density has been obtained which allows the accurate prediction of the time to breakdown at various stress levels, as has been inferred by Constant Current Stress (CCS) experiments. Moreover, these results suggest that the CCS time to breakdown follows a ``1/E´´ model in agreement with the bulk oxide trapping processes.
Keywords
Anodes; Carbon capture and storage; Current density; Degradation; Electric breakdown; Electron emission; Electron traps; Microelectronics; Stress; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436016
Link To Document