• DocumentCode
    513766
  • Title

    Low Voltage NVGTM: A New High Performance 3V/5V Flash Technology for Portable Computing and Telecommunications Applications

  • Author

    Bergemont, Albert ; Chi, Min Haw ; Haggag, Hosam

  • Author_Institution
    National Semiconductor, Santa Clara, CA 95052
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    543
  • Lastpage
    547
  • Abstract
    A new concept for a low voltage NOR Virtual Ground (NVGTM) Flash array with a fast access time is introduced. New array concepts and process technologies are introduced to achieve programming by 5V Vpp and reading at 3V +/-10% Vcc. The array performance is enhanced by segmentation and using extra access transistor for each segment. The control of the erased cell threshold voltage distribution is one of the key issues for the 3V read operation in low voltage flash. This problem is minimized by a new erase scheme and self recovering erase techniques.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5436044
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513766