• DocumentCode
    513785
  • Title

    Double-Poly EEPROM Cell for High Density Memories using Positive and Negative Voltage Programming

  • Author

    Pio, F. ; Paruzzi, P. ; Baldi, L. ; Riva, C.

  • Author_Institution
    SGS-THOMSON Microelectronics, Central R&D, Via C.Olivetti 2 - 20041 AGRATE - ITALY
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    693
  • Lastpage
    696
  • Abstract
    This paper will present a very compact EEPROM cell for high density applications, featuring split voltage programming. The information is stored in a self-aligned floating-gate transistor with thin (8nm) tunnel oxide. Bit selection is performed by a low-voltage transitor. Long endurance (more than 106 cycles) is achieved and the asymmetric window closing will be explained. The innovative cell concept has been validated on a 256k parallel EEPROM device.
  • Keywords
    CMOS technology; Character generation; Dielectrics; EPROM; Electron traps; Microelectronics; Nonvolatile memory; Research and development; Stress; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513785