• DocumentCode
    513786
  • Title

    1/f Noise in Polycrystalline Silicon Thin Film Transistors

  • Author

    Corradetti, A. ; Leoni, R. ; Carluccio, R. ; Fortunato, G. ; Reita, C. ; Plais, F. ; Pribat, D.

  • Author_Institution
    IESS-CNR, Via Cineto Romano 42,00156 Roma, ITALY
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    611
  • Lastpage
    614
  • Abstract
    A systematic study of the noise performances of polycrystalline silicon thin film transistors is presented. The drain current spectral density of these devices shows an evident 1/f behavior and scales, when operating in the linear regime, with the square of the mean value of the drain current. From the analysis of the results the origin of the noise can be ascribed to carrier number fluctuations related to the dynamic trapping and detrapping of the oxide traps.
  • Keywords
    Active matrix liquid crystal displays; Circuit noise; Fluctuations; Noise measurement; Noise reduction; Plasma measurements; Semiconductor device noise; Silicon; Thin film transistors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5436065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513786