Resonant Tunneling through (Submicron) Si/SiGe Double Barrier Structures Fabricated by Selective Epitaxy

Author

Lukey, P.W. ; Caro, J. ; Storm, A.B. ; van der Drift, E.W.J.M. ; Zijlstra, T. ; Werner, K. ; Radelaar, S.

Author_Institution

Delft Institute of Microelectronics and Submicrontechnology (DIMES), Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands

fYear

1995

fDate

25-27 Sept. 1995

Firstpage

623

Lastpage

626

Abstract

We have investigated transport of holes through Si/SiGe double barrier resonant tunneling structures (DBRTS) fabricated by selective epitaxy in windows in a SiO2 layer. The shunting of the DBRTS by poly-crystalline material is avoided by the use of an undercut profile of the window side walls. With this method asymmetric devices with diameters in the range of 500 nm-100 Â¿m have been fabricated. The current-voltage characteristics of both large area and submicron devices show four resonances. These arise from tunneling through two heavy and two light hole states as follows from an analysis with the transfer matrix method.

Keywords

Current-voltage characteristics; Electrons; Epitaxial growth; Fabrication; Germanium silicon alloys; Molecular beam epitaxial growth; Resonance; Resonant tunneling devices; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European

Conference_Location

The Hague, The Netherlands

Print_ISBN

286332182X

Type

conf

Filename

5436069