DocumentCode
513793
Title
Platinum Etching in an Inductively Coupled Plasma
Author
Park, S.G. ; Lee, J.G. ; Choi, Y.S. ; Lee, S.H. ; Yoo, W.J. ; Jung, C.O. ; Koh, Y.B. ; Lee, M.Y.
Author_Institution
Microelectronics Research Lab, Inha University, Inchon, 402-751, Korea
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
631
Lastpage
634
Abstract
Inductively coupled plasma as a high density plasma source and Cl2 as main process gas are tested for etching of Pt thin films. Optical emission spectra show the possible compound formation of Pt with Cl, which is an evidence of ion-assisted chemical reaction. Addition of oxygen to Cl2 plasma enhances the selectivity to hard SiO2 mask to more than 2.0 while maintaining Pt etch rate higher than 200 nm/min. Patterning of half micron Pt lines is demonstrated.
Keywords
Etching; Optical films; Plasma applications; Plasma chemistry; Plasma density; Plasma sources; Platinum; Stimulated emission; Testing; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436112
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