DocumentCode :
513793
Title :
Platinum Etching in an Inductively Coupled Plasma
Author :
Park, S.G. ; Lee, J.G. ; Choi, Y.S. ; Lee, S.H. ; Yoo, W.J. ; Jung, C.O. ; Koh, Y.B. ; Lee, M.Y.
Author_Institution :
Microelectronics Research Lab, Inha University, Inchon, 402-751, Korea
fYear :
1996
fDate :
9-11 Sept. 1996
Firstpage :
631
Lastpage :
634
Abstract :
Inductively coupled plasma as a high density plasma source and Cl2 as main process gas are tested for etching of Pt thin films. Optical emission spectra show the possible compound formation of Pt with Cl, which is an evidence of ion-assisted chemical reaction. Addition of oxygen to Cl2 plasma enhances the selectivity to hard SiO2 mask to more than 2.0 while maintaining Pt etch rate higher than 200 nm/min. Patterning of half micron Pt lines is demonstrated.
Keywords :
Etching; Optical films; Plasma applications; Plasma chemistry; Plasma density; Plasma sources; Platinum; Stimulated emission; Testing; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
Print_ISBN :
286332196X
Type :
conf
Filename :
5436112
Link To Document :
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