Title :
Large-Area ACTFEL Device Prepared by Metalorganic Chemical Vapor Deposition
Author :
Su, S.H. ; Tsai, P.R. ; Yokoyama, M. ; Su, Y.K.
Author_Institution :
Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan, R. O. C.
Abstract :
ZnS thin film with a large area of 19×13cm2 has been grown by the low pressure MOCVD system in order to study large area TFEL devices. The uniformities of the thickness and crystallinity of the large area ZnS thin film have been studied as functions of the flow rate of H2 and the slit of inlet nozzles. An uniform large area ZnS thin film not only in thickness but also in crystallinity has been obtained by a two-step deposited method. The variance of the film thickness has been controlled below ±3%. The ratio of S/Zn is close to unity evaluated by the measurement of EPMA. An ACTFEL device with a double insulating layer structure (glass/ITO /Ta2O5/ZnS:Mn/Ta2O5/Al) has been fabricated. The luminescence is higher than that of the other reports, which use the same Mn source.
Keywords :
Chemical vapor deposition; Crystallization; Glass; Insulation; MOCVD; Sputtering; Thickness control; Thin film devices; Transistors; Zinc compounds;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
