DocumentCode
513806
Title
Mechanical Stress in and Surrounding CoSi2 and TiSi2 Lines
Author
De Wolf, Ingrid ; Howard, David J. ; Maex, Karen ; Maes, Herman E.
Author_Institution
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
609
Lastpage
612
Abstract
In this paper, the local mechanical stress near arrays of silicide lines with different thicknesses, widths, and pitches is studied using micro-Raman spectroscopy. Different silicides are compared: CoSi, CoSi2 , CoSi2 formed with Ti cap, CoSi2 formed with Ti interlayer, C49 TiSi2 and C54 TiSi2 . The local phase of the latter two samples was also determined by Raman spectroscopy.
Keywords
Compressive stress; Diodes; Frequency; Mechanical variables measurement; Raman scattering; Silicidation; Spectroscopy; Stress measurement; Substrates; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436133
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