Title :
Optimization and Comparison of Losses in Si and 4H SiC 1kV Trench MOSFETs
Author :
Bakowski, M. ; Gustafsson, U
Author_Institution :
Industrial Microelectronics Center, P. O. Box 1084, S-164 21 Kista, Sweden
Abstract :
In this paper the performance of the 1kV 4H SiC trench gate UMOS type MOSFET is investigated with respect to the optimization of the total device losses. The total losses in 1kV Si and 4H SiC MOSFETs are calculated as a function of frequency in the case of a DC-AC PWM converter. The superiority of the SiC MOSFET is demonstrated also taking into account the very poor state of the art channel mobility of 15 cm2/Vs.
Keywords :
Design optimization; Diodes; Doping; Frequency conversion; MOSFETs; Performance loss; Pulse width modulation converters; Silicon carbide; Switching loss; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
