EBIC Analysis of SiC Mesa Diodes

Mesa etched p⁺ n SiC diodes were investigated using EBIC. The EBIC signal was analysed using TMA Medici and Monte Carlo simulations. Space charge characteristics obtained from EBIC and static device simulations were compared. Surface charge density and minority carrier lifetime of the low doped n-type region were determined. The charge generation volume is described by an analytical approximation based on calculations using single scattering Monte Carlo simulation code. Results show large positive surface charge of the order of 10¹³cm^-2 present at the n-type SiC/SiO2 interface. A common origin of the surface charge on n- and p-type SiC is suggested.