• DocumentCode
    513825
  • Title

    Experimental Study of Deep Levels in MESFETs

  • Author

    Meneghesso, G. ; Gasparetto, G. ; Paccagnella, A. ; Camin, D.V. ; Pessina, G. ; Fedyakin, N. ; Canali, C.

  • Author_Institution
    DEI, UniversitÃ\xa0 di Padova, via Gradenigo 6/A 35131 Padova, Italy
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    563
  • Lastpage
    566
  • Abstract
    We have induced the formation of deep levels in the active channel of GaAs MESFET´s by exposing these devices to high fluence of energetic neutrons. A result, we have measured a modification of the main DC parameters, i.e. decrease of IDSS, gm and Vp. By using an experimental technique based on the frequency dispersion of the device transconductance, gm(f), we have been able to indentify at least one of the type of the defects (U-band) introduced in the GaAs substrate by irradiation.
  • Keywords
    Electrons; Frequency measurement; Frequency modulation; Gallium arsenide; Leakage current; MESFETs; Neutrons; Temperature; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436165
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513825