Title :
2D Simulation of Velocity Overshoot in GaAs HBT
Author :
Maneux, C. ; Labat, N. ; Fouillat, P. ; Touboul, A. ; Danto, Y.
Author_Institution :
Laboratoire IXL, URA 846-CNRS - Universite Bordeaux I, 351 Cours de la Lib?ration, 33405 TALENCE, France
Abstract :
The expression of the current density equation in AlGaAs/GaAs HBT in presence of carrier density and temperature gradients, as well as electric field, is derived from the drift diffusion equation. A new term taking into account the electron relaxation time is shown to be comparable in magnitude to the other terms in the current-flow equation. This term allows to point out the velocity overshoot effect.
Keywords :
Current density; Electron mobility; Equations; Gallium arsenide; Heterojunction bipolar transistors; Kinetic energy; Lattices; Steady-state; Temperature; Tin;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
