DocumentCode
513830
Title
A New Technological Process to Realize InGaAsP/InP Semi-Insulating Buried Heterostructure Lasers Emitting at 1.55 μm
Author
Fang, R.Y. ; Bertone, D. ; Bricconi, A. ; Greborio, L. ; Magnetti, G. ; Meliga, M. ; Morello, G. ; Paoletti, R.
Author_Institution
CSELT - Centro Studi e Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148 Torino, Italy, Tel: +39 11 2285765, Fax: +39 11 2285695, E-mail: Fang@cselt.stet.it
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
533
Lastpage
536
Abstract
We have developed a new technological process, based on MOCVD growth technique, to realize SI-BH (Semi Insulating-Buried Heterostructure) semiconductor laser emitting at 1.55 μm. A SI-BH laser is attractive for high speed operation and mass production. In fact, due to the high resistivity of the Fe-doped (semi-insulating) InP blocking layer, leakage current and parasitic capacitance can be minimized.
Keywords
Conductivity; Etching; Indium phosphide; Leakage current; MOCVD; Masers; Power lasers; Scanning electron microscopy; Semiconductor lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436172
Link To Document