Title :
A Process for Strained Silicon n-Channel HMOSFETs
Author :
Clifton, P.A. ; Routley, P.A. ; Gurry, P.K. ; O´Neill, A.G. ; Carter, J.A. ; Kemhadjian, H.A.
Author_Institution :
Dept. of Electrical and Electronic Engineering, University of Newcastle, Merz Court, Newcastle upon Tyne, NE1 7RU, UK.
Abstract :
High electron mobility strained silicon n-channel heterostructure MOSFETs with sub-micron channel lengths have been investigated by numerical simulation and appropriate close-to-conventional device processing technologies have been developed. The requirement to avoid relaxation and interdiffusion of the strained silicon layer which is bounded by relaxed SiGe alloy sets a limit on the total thermal budget. Processing of n-channel MOSFETs on silicon substrates with a maximum temperature of 810°C has been successfully demonstrated.
Keywords :
Cobalt; Doping; Electron mobility; Germanium silicon alloys; MOSFETs; Scattering; Silicides; Silicon germanium; Temperature; Titanium;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
