• DocumentCode
    513832
  • Title

    A Process for Strained Silicon n-Channel HMOSFETs

  • Author

    Clifton, P.A. ; Routley, P.A. ; Gurry, P.K. ; O´Neill, A.G. ; Carter, J.A. ; Kemhadjian, H.A.

  • Author_Institution
    Dept. of Electrical and Electronic Engineering, University of Newcastle, Merz Court, Newcastle upon Tyne, NE1 7RU, UK.
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    519
  • Lastpage
    522
  • Abstract
    High electron mobility strained silicon n-channel heterostructure MOSFETs with sub-micron channel lengths have been investigated by numerical simulation and appropriate close-to-conventional device processing technologies have been developed. The requirement to avoid relaxation and interdiffusion of the strained silicon layer which is bounded by relaxed SiGe alloy sets a limit on the total thermal budget. Processing of n-channel MOSFETs on silicon substrates with a maximum temperature of 810°C has been successfully demonstrated.
  • Keywords
    Cobalt; Doping; Electron mobility; Germanium silicon alloys; MOSFETs; Scattering; Silicides; Silicon germanium; Temperature; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436175
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513832