DocumentCode :
513836
Title :
A Charge based MOSFET Model for Low-Voltage Mixed-Signal Applications
Author :
Schrom, G. ; Stach, A. ; Selberherr, S.
Author_Institution :
Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, A-1040 Vienna, Austria. E-mail schrom@iue.tuwien.ac.at
fYear :
1996
fDate :
9-11 Sept. 1996
Firstpage :
495
Lastpage :
498
Abstract :
Recent developments towards lower voltages [1, 2, 3, 4] pose increasingly stringent demands on compact device model accuracy. We present a new approach to dynamic MOSFET modeling which is especially suited for the simulation of low-voltage mixed analog digital circuits. The model is based on terminal charges and conductive currents which are determined from transient current/voltage data. These data sets can be easily obtained through measurement or simulation of the devices. Using a physically motivated interpolation method the model supplies the accurate current/charge data and their derivatives for given terminal voltages.
Keywords :
Application software; Capacitance; Circuit simulation; Computational modeling; Current measurement; Electronic mail; Interpolation; MOSFET circuits; Microelectronics; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
Print_ISBN :
286332196X
Type :
conf
Filename :
5436180
Link To Document :
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