• DocumentCode
    513837
  • Title

    Analysis of S/D Engineering through Short Channel Effect and Hot Carrier Injection behavior in a 0.35μm CMOS Technology

  • Author

    Vandenbossche, E. ; Delpech, P.H. ; Revil, N. ; Haond, M.

  • Author_Institution
    Centre Commun CNET SGS-THOMSON Microelectronics, 850 Rue Jean Monnet 38921 Crolles, France
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    491
  • Lastpage
    494
  • Abstract
    The evolution of the NMOS transistor Source/Drain engineering of a 0.35μm CMOS Technology is presented through the analysis of both Short Channel Effect (SCE) and Hot-Carrier Injection (HCI) behavior for various S/D architectures. Experimental and process/device simulation results provide a helpful understanding of the physical phenomena involved in the SCE and HCI. A trade-off between SCE and HCI is proposed.
  • Keywords
    Aging; CMOS technology; Circuit simulation; Current measurement; Degradation; Hot carrier injection; Human computer interaction; Implants; MOS devices; Stress measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513837