DocumentCode
513840
Title
Two-Dimensional Analytical Modelling of Subthreshold Region in Fully-Depleted SOI MOSFETs
Author
Pidin, S. ; Koyanagi, M.
Author_Institution
Department of Machine Intelligence and System Engineering, Faculty of Engineering, Tohoku University, Aramaki, Aoba-ku, Sendai 980-77, Japan
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
479
Lastpage
482
Abstract
New two-dimensional analytical models for the potential distribution and the subthreshold factor in SOI MOSFET are developed and extensive study of 0.1 ¿m SOI MOSFET design is performed. It is shown that the ultra-thin SOI films and high doping concentrations are necessary to obtain high subthreshold slopes in SOI MOSFETs.
Keywords
Analytical models; Design engineering; Doping; MOS devices; MOSFETs; Machine intelligence; Performance analysis; Semiconductor films; Silicon; Systems engineering and theory;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436184
Link To Document