Title :
High-Frequency SiGe HBT´s with Implanted Emitters
Author :
Nanver, L.K. ; Goudena, E.J.G. ; Visser, C. ; van Zeijl, H.W. ; Slotboom, J.W.
Author_Institution :
DIMES IC Process Research Sector, Delft University of Technology, P.O.box 5053, 2600 GB Delft, The Netherlands
Abstract :
A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe HBT´s with implanted emitters. A device with 30 nm basewidth and fT = 44 GHz is demonstrated.
Keywords :
Boron; Doping; Epitaxial growth; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Performance gain; Power dissipation; Production; Silicon germanium;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
