DocumentCode
513845
Title
A Si-Ge HBT Technology for the Wireless Marketplace
Author
Ahlgren, D.C. ; Sunderland, D.A. ; Gilbert, M.M. ; Greenberg, D.R. ; Jeng, S.J. ; Malinowski, J.G. ; Nguyen-Ngoc, Dominique ; Stein, K.J ; Harame, D.L. ; Meyerson, B.
Author_Institution
IBM Microelectronics Division, Hopewell Junction, NY.
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
453
Lastpage
460
Abstract
This review presents the fundamentals of IBM´s epi-base SiGe Heterojunction Bipolar Transistor (HBT) technology which is optimized for use in high performance analog and mixed signal applications. SiGe HBT device design, optimization, and integration into a manufacturable technology with 12 support devices is discussed. We will review circuits which have been fabricated in this technology operating at up to 23 GHz. This demonstrates the extension of this technology into a performance range not previously thought possible in silicon.
Keywords
Bipolar transistors; Current density; Design optimization; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Manufacturing; Microelectronics; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436192
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