Title :
A Si-Ge HBT Technology for the Wireless Marketplace
Author :
Ahlgren, D.C. ; Sunderland, D.A. ; Gilbert, M.M. ; Greenberg, D.R. ; Jeng, S.J. ; Malinowski, J.G. ; Nguyen-Ngoc, Dominique ; Stein, K.J ; Harame, D.L. ; Meyerson, B.
Author_Institution :
IBM Microelectronics Division, Hopewell Junction, NY.
Abstract :
This review presents the fundamentals of IBM´s epi-base SiGe Heterojunction Bipolar Transistor (HBT) technology which is optimized for use in high performance analog and mixed signal applications. SiGe HBT device design, optimization, and integration into a manufacturable technology with 12 support devices is discussed. We will review circuits which have been fabricated in this technology operating at up to 23 GHz. This demonstrates the extension of this technology into a performance range not previously thought possible in silicon.
Keywords :
Bipolar transistors; Current density; Design optimization; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Manufacturing; Microelectronics; Silicon germanium;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
