Title :
Bias Stress Stability of C-doped AlGaAs/GaAs HBTs
Author :
Sheng, H. ; Cattani, L. ; Amin, F. ; Rezazadeh, A.A. ; Fantini, F. ; Wake, D. ; Bland, S.
Author_Institution :
Centre for Optics and Electonics, Department of Electronics & Electrical Engineering, King´´s College London, Strand, London. UK
Abstract :
The bias-stress reliability of MOCVD grown C-doped AlGaAs/GaAs HBTs were studied. We found that B/E heterojunction is very stable in agreement with the literature. However, current gain degradation was found to be device dependent. Further more, we found that the B/C metallurgical degrades with stress, leading to device failure.
Keywords :
Degradation; Educational institutions; Gallium arsenide; Gold; Heterojunction bipolar transistors; MOCVD; Space charge; Stability; Stress measurement; Zinc;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
