DocumentCode
513849
Title
A Transient Activation Model for Phosphorus After Sub-Amorphizing Channeling Implants
Author
Puchner, H. ; Neary, P. ; Aronowitz, S. ; Selberherr, S.
Author_Institution
Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, A-1040 Vienna, Austria. E-mail puchner@iue.tuwien.ac.at
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
157
Lastpage
160
Abstract
We present a diffusion model for the activation of phosphorus after a sub-amorphizing channeling implant into bare silicon under intrinsic conditions. A coupled diffusion model has been developed to take into account the basic impurity diffusion mechanisms as well as point-defect generation-recombination mechanisms occuring during thermal treatment of doped silicon. The role of the vacancy based Frank-Turnbull recombination was investigated for the activation process.
Keywords
Annealing; Diffusion processes; Doping; Equations; Implants; Impurities; Semiconductor device modeling; Semiconductor process modeling; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436203
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