Performance Improvement in a 200 mm BiCMOS Technology by Si/SiGe Heterojuncton Bipolar Transistor Integration

Author

de Berranger, E. ; Bodnar, S. ; Chantre, A. ; Kirtsch, J. ; Monroy, A. ; Laurens, M. ; Granier, A. ; Regolini, J.L. ; Mouis, M.

Author_Institution

France Telecom, CNET Grenoble, BP98, 38243 Meylan Cedex, France.; Laboratoire de Physique de la MatiÃ¿re, CNRS UMR C5511, INSA Lyon, Bat. 502, 69621 Villeurbanne Cedex, France

fYear

1996

fDate

9-11 Sept. 1996

Firstpage

433

Lastpage

436

Abstract

This paper reports the integration of SiGe HBTs in a 200 mm, 0.5 Â¿m BiCMOS process, as a first step towards an HBT-CMOS industrial technology. This was performed by suppressing the base implantation step and growing instead the emitter-base system selectively on the base active area, using an industrial Reduced-Pressure CVD cluster-tool. The so-fabricated HBTs show improved performance compared to the implanted base BJT of the support technology in terms of current gain, Early voltage and pinched base resistance. This improvement can be traded against higher collector doping and therefore higher operation frequency.

Keywords

BiCMOS integrated circuits; Bipolar transistors; Doping; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Rapid thermal annealing; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European

Conference_Location

Bologna, Italy

Print_ISBN

286332196X

Type

conf

Filename

5436209