• DocumentCode
    513858
  • Title

    A 30 GHz fT Quasi Self-Aligned Single Poly Emitter Bipolar Technology

  • Author

    de Pontcharra, J. ; Behouche, E. ; Ailloud, L. ; Thomas, D. ; Gravier, T. ; Chantre, Alain

  • Author_Institution
    CEA-LETI, 17 av. des Martyrs, 38054 Grenoble Cedex 9, France.
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    425
  • Lastpage
    428
  • Abstract
    Single polysilicon NPN transistors with quasi-self aligned structure fabricated in a low complexity 0.5 ¿m-BiCMOS technology demonstrate ideal static characteristics and good frequency performances. The obtained 30 GHz maximum fT and 4.2 V breakdown voltage are comparable to the best reported results for single poly self-aligned transistors.
  • Keywords
    Boron; CMOS process; Etching; Frequency; Geometry; Implants; Microelectronics; Protection; Silicon carbide; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513858