Title :
Hot-Carrier Reliability of S4D n-MOSFETs
Author :
Yoshitomi, T. ; Saito, M. ; Ohguro, T. ; Ono, M. ; Momose, H.S. ; Iwai, H.
Author_Institution :
Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan. Phone: +81-44-549-2335 Fax: +81-44-549-2291
Abstract :
The hot-carrier reliability of S4D MOSFETs was investigated for the first time. The S4D structure offers a large improvement in current degradation as compared with the LDD structure, despite the greater current driving-ability. We estimate that a 0.2 ¿m gate length S4D n-MOSFET will operate with good hot-carrier reliability for more than 10 years at a supply voltage of 2 V.
Keywords :
Degradation; Electrodes; Electron traps; Hot carriers; Interface states; Ion implantation; MOSFET circuits; Silicon; Stress; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
