Title :
Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFET´s
Author :
Hwang, Hyunsang ; Lee, Dong-Hoon ; Hwang, Jeong Mo
Author_Institution :
ULSI Laboratory, LG Semicon Co., #1, Hyangjeong, Hungduk, Cheongju 360-480, KOREA
Abstract :
In this paper, we have compared the reliability characteristics of MOSFET with nitride sidewall and oxide sidewall spacer. We found that the unique reliability characteristics of nitride sidewall spacer device. At the initial stage of stress, large degradation of drain current occurs for nitride sidewall device at low stress drain bias due to the enhanced trapping of nitride spacer. However, nitride sidewall devices exhibit improvement of device lifetime which was defined as a 10% degradation of drain current.
Keywords :
Degradation; Etching; Fabrication; Hot carriers; Impact ionization; Ion implantation; MOSFET circuits; Random access memory; Stress; Ultra large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
