Title :
Electron Velocity Overshoot in Strained Si/Si1-xGex MOSFETs
Author :
Gamiz, F. ; López-Villanueva, J.A. ; Roldán, J.B. ; Carceller, J.E. ; Cartujo, P.
Author_Institution :
Departamento de Electr?nica y Tecnolog?a de Computadores, Universidad de Granada. Facultad de Ciencias., 18071 GRANADA (SPAIN)
Abstract :
Electron transport properties of strained-Si on relaxed Si1-xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electron-velocity-overshoot effects are also studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts.
Keywords :
Effective mass; Electron mobility; Light scattering; MOSFETs; Monte Carlo methods; Phonons; Quantization; Silicon; Steady-state; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
