• DocumentCode
    513889
  • Title

    Physical Modeling of the Transit Time in Bipolar Transistors

  • Author

    Weng, J.

  • Author_Institution
    Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, 8000 Munich 83, FRG
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    73
  • Lastpage
    76
  • Abstract
    A new physical modeling of the forward transit time ¿f in bipolar transistors for a large range of collector-current densities jC at various base-collector voltages VBC is presented. The validity of this model is confirmed by measurements on fast self-aligned silicon bipolar transistors and by device simulations.
  • Keywords
    Bipolar transistors; Circuit simulation; Circuit synthesis; Equations; Frequency measurement; Microelectronics; Power system modeling; Silicon; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5436249
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513889