• DocumentCode
    513890
  • Title

    Stripe Width Dependence of OED in Submicron LOCOS Structures - New boundary condition for self-interstitials

  • Author

    Shibata, Y. ; Hashimoto, S. ; Taniguchi, K. ; Hamaguchi, C.

  • Author_Institution
    Department of Electronic Engineering, Osaka University, Yamada-oka, Suita 565, Japan
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    61
  • Lastpage
    64
  • Abstract
    Phosphorus diffusion in a wide range of oxidation rate was investigated. Based on the experimental data, a new physical model for oxidation rate dependence of oxidation enhanced diffusion is proposed, in which self-interstitial concentration at the Si/SiO2 interface is closely related to the oxidation reaction kinetics. Two dimensional (2-D) simulations for dopant diffusion in submicron LOCOS structures demonstrate the validity of the new boundary condition through the comparison with the experimental data.
  • Keywords
    Boron; Boundary conditions; Kinetic theory; Lithography; Microelectronics; Modems; Oxidation; Semiconductor process modeling; Silicon; Two dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5436250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513890