Stripe Width Dependence of OED in Submicron LOCOS Structures - New boundary condition for self-interstitials

Phosphorus diffusion in a wide range of oxidation rate was investigated. Based on the experimental data, a new physical model for oxidation rate dependence of oxidation enhanced diffusion is proposed, in which self-interstitial concentration at the Si/SiO2 interface is closely related to the oxidation reaction kinetics. Two dimensional (2-D) simulations for dopant diffusion in submicron LOCOS structures demonstrate the validity of the new boundary condition through the comparison with the experimental data.