DocumentCode
513893
Title
Nonstationary Electron Transport in Realistic Submicron BP-SAINT GaAs MESFETs Evaluated by Ensemble Monte Carlo Simulation
Author
Yamada, Y.
Author_Institution
Department of Electrical Engineering and Computer Science, Kumamoto University, Kurokami 2-39-1, Kumamoto City 860, JAPAN
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
45
Lastpage
48
Abstract
The nonstationary electron transport in the realistic nonuniformly-doped BPSAINT GaAs MESFETs with 0.1 to 0.53¿m gate-lengths has been studied under the various conditions using an ensemble Monte Carlo simulator. It is found that the effective saturation velocity depends on the gate-length, but also on the drain voltage, the gate voltage, and the doping density. The some assumptions used in the relaxation time approximation are discussed.
Keywords
Cities and towns; Computational modeling; Computer simulation; Doping; Electrons; Gallium arsenide; MESFETs; Microelectronics; Monte Carlo methods; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5436254
Link To Document