Title :
Numerical Study of a Silicon Permeable Base Transistor with a Non-Uniform Doping Profile
Author_Institution :
France Telecom, CNET/CNS, Chemin du Vieux-Chêne, BP 98, F-38243 Meylan Cedex, France; Institut d´´Electronique Fondamentale, CNRS URA 22, F-91405 Orsay Cedex, France
Abstract :
We present the results of the 2D numerical simulation of a silicon permeable base transistor. We correlate the slight degradations of the transconductance and transit frequency, as well as the large improvement of the power capability which were obtained with a non-uniform doping profile, to the physical mechanisms involved, and showed that a significant net improvement of the fTVB product can be gained by this means.
Keywords :
Breakdown voltage; Doping profiles; Epitaxial layers; Fingers; Frequency; Geometry; Periodic structures; Power generation; Silicon; Substrates;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
