• DocumentCode
    513898
  • Title

    Low frequency noise in quantum-well GexSi1-x PMOSFET´s

  • Author

    Chang, J. ; Nayak, D.K. ; Raman, V.K. ; Woo, J.C.S. ; Park, J.S. ; Wang, K.L. ; Viswanathan, C.R.

  • Author_Institution
    Department of Electrical Engineering, University of California (UCLA), Los Angeles, California 90024, U.S.A.
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    19
  • Lastpage
    22
  • Abstract
    This paper describes the low frequency noise behavior of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (l/f) noise becomes important.
  • Keywords
    1f noise; Low-frequency noise; MOSFET circuits; Molecular beam epitaxial growth; Noise generators; Noise measurement; Quantum well devices; Quantum wells; Semiconductor device noise; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5436260
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513898