Title :
Low frequency noise in quantum-well GexSi1-x PMOSFET´s
Author :
Chang, J. ; Nayak, D.K. ; Raman, V.K. ; Woo, J.C.S. ; Park, J.S. ; Wang, K.L. ; Viswanathan, C.R.
Author_Institution :
Department of Electrical Engineering, University of California (UCLA), Los Angeles, California 90024, U.S.A.
Abstract :
This paper describes the low frequency noise behavior of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (l/f) noise becomes important.
Keywords :
1f noise; Low-frequency noise; MOSFET circuits; Molecular beam epitaxial growth; Noise generators; Noise measurement; Quantum well devices; Quantum wells; Semiconductor device noise; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
