Title :
Simulation and Experimental Results of Al Doping by Ion Beam Mixing Technique for Deep Low Doped Junction Formation
Author :
Godignon, P. ; Morvan, E. ; Montserrat, J. ; Jordá, X. ; Vellvehí, M. ; Hidalgo, S. ; Rebollo, J.
Author_Institution :
Centro Nacional de Microelectronica (CNM-CSIC), Campus U.A.B., 08193 Bellaterra, Spain
Abstract :
This paper presents a method for Aluminum inclusion into silicon based on ion mixing. Argon ions are implanted through a Al layer deposited on a silicon substrate. Several experiments consisting in implantation + annealing have been carried out in order to obtain low doped and deep P-N juntions. Besides, since this process has to be optimized, a implantation simulator based on the MonteCarlo method have been developed and coupled with SUPREM-3 simulations for diffusion process study. Results show that it is possible to obtain deep junction with reduced thermal budjet. Doses over 3e15cm-2 can not be used since undesirable effects occur when annealing the impurities.
Keywords :
Aluminum; Annealing; Argon; Atomic layer deposition; Doping; Implants; Impurities; Ion beams; Silicon; Thickness measurement;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
