Investigation of thermally generated leakage currents in silicon pn-junctions by means of 2D-Device Simulations

Analysis of thermally generated lealkage currents in siliconI pn-junctions can be used for advanced process and device characterization at high temperatures. In this contribution, a new method is presented to extract simultaneously minority carrier lifetimes ¿n, and ¿p, surface recombination velocities s and oxide and interface charge carrier densities Qss. The method is based on leakage current measurements using special designed gate-controlled pn-junctions. The parameter extraction is done by inverse modelinig with the 2D-Device Simulator MEDICI.