Microcontamination-Advanced Manufacturing Process Technologies

The simultaneous establishment of "Ultra Clean Processing Environment," "Ultra Clean Wafer Surface," and "perfect Process Parameter Control," is the key to realize high performance processes for manufacturing deep submicron ULSI\´s. This has been demonstrated by experimental results of low-temperature silicon epitaxy by low-energy bias sputtering. In order to create ideal interfaces by eliminating native oxide growth, a closed manufacturing system has been proposed as a candidate for future advanced semiconductor manufacturing in which wafers are processed completely isolated from atmosphere.