A new charge pumping procedure to measure interface trap energy distributions on MOSFETs

A new approach to the application of the well-known charge pumping technique is proposed as a tool for the measurement of the energy distribution of interface traps in small area MOSFETs. In the classical procedure, the band gap is scanned by applying pulses with variable transition times to the gate of the transistor, defining different energy windows from which the charge pumping signal is measured. The new approach is spectroscopic in nature, i.e., only one energy window is defined and forced to move through the band gap by changing the sample temperature. This method has the advantages of addressing a larger part of the band gap as compared to the classical approach, to reduce complication in the processing of the data and to yield information about the hole and electron capture cross sections separately.