Title :
Modelling and simulation of silicon-on-sapphire MOSFETs for analogue circuit design
Author :
Howes, R. ; Redman-White, W. ; Nichols, K.G. ; Murray, S.J. ; Mole, P.J.
Author_Institution :
Department of Electronics and Computer Science, The University, Southampton, U.K.
Abstract :
A simple physically based CAD model for the SOS MOSFET is described suitable for the design of analogue as well as digital circuits. The model has been implemented in the SPICE2 program. A comparison between simulated and measured amplifier characteristics shows significant improvements in modelling accuracy compared with a bulk MOS model. Simulation times for the new model are presented.
Keywords :
Body regions; Circuit simulation; Circuit synthesis; Design automation; Digital circuits; Immune system; Impact ionization; Isolation technology; MOSFETs; Silicon on insulator technology;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
