DocumentCode
513911
Title
Modelling and simulation of silicon-on-sapphire MOSFETs for analogue circuit design
Author
Howes, R. ; Redman-White, W. ; Nichols, K.G. ; Murray, S.J. ; Mole, P.J.
Author_Institution
Department of Electronics and Computer Science, The University, Southampton, U.K.
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
539
Lastpage
542
Abstract
A simple physically based CAD model for the SOS MOSFET is described suitable for the design of analogue as well as digital circuits. The model has been implemented in the SPICE2 program. A comparison between simulated and measured amplifier characteristics shows significant improvements in modelling accuracy compared with a bulk MOS model. Simulation times for the new model are presented.
Keywords
Body regions; Circuit simulation; Circuit synthesis; Design automation; Digital circuits; Immune system; Impact ionization; Isolation technology; MOSFETs; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436298
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