Title :
ELSIMA: ELDO short-channel IGFET model for analog applications
Author :
Pedron, T. ; Merckel, G.
Author_Institution :
CNET-CNS, Chemin du vieux Chêne, BP 98 38243 MEYLAN CEDEX FRANCE
Abstract :
A new MOSFET model for analog circuits is presented. It allows analog circuit designers to obtain accurate simulation of Operational Amplifiers perormances (gain, offset, temperature and frequency behaviour). The continuity of the current and conductance is achieved between the linear and saturation regime. The weak avalanche effect is taken into account.
Keywords :
Analog circuits; Capacitors; Circuit simulation; Feedback; Frequency; MOSFET circuits; Operational amplifiers; Semiconductor process modeling; Switches; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
