DocumentCode :
513912
Title :
ELSIMA: ELDO short-channel IGFET model for analog applications
Author :
Pedron, T. ; Merckel, G.
Author_Institution :
CNET-CNS, Chemin du vieux Chêne, BP 98 38243 MEYLAN CEDEX FRANCE
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
543
Lastpage :
546
Abstract :
A new MOSFET model for analog circuits is presented. It allows analog circuit designers to obtain accurate simulation of Operational Amplifiers perormances (gain, offset, temperature and frequency behaviour). The continuity of the current and conductance is achieved between the linear and saturation regime. The weak avalanche effect is taken into account.
Keywords :
Analog circuits; Capacitors; Circuit simulation; Feedback; Frequency; MOSFET circuits; Operational amplifiers; Semiconductor process modeling; Switches; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436299
Link To Document :
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