Title :
A new stacked capacitor cell for 64 Mbit DRAMs
Author :
Kim, Cheon Soo ; Lee, Jin Ho ; Lee, Kyu Hong ; Kim, Dae Yong ; Lee, Jin Hyo ; Kim, Chung Duk
Author_Institution :
Memory Div., Electronics & Telecommunication Research Institute, P.O. Box 8, Daedog Science Town, Daejeon, Koren
Abstract :
A new stacked capacitor memory cell named a Cup-shaped Storage Node (CSN) is proposed for high density DRAMs. The storage capacitance of the cell is enhanced by stacking the cup shaped polysilicon layer. So single and double layered stacked cell structures can be fabricated with simple extra process steps. The usefulness of the fabrication process and electrical characteristics of this novel cell structure has been demonstrated.
Keywords :
Capacitance; Capacitors; Cities and towns; Electric variables; Electrons; Etching; Fabrication; Random access memory; Silicon; Stacking;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
