DocumentCode
513929
Title
Temperature behaviour of CMOS devices built on SIMOX substrates
Author
Belz, J. ; Burbach, G. ; Vogt, H. ; Zimmenmarnn, W
Author_Institution
Fraunhofer Institute of Microelectronic Circuits and Systems, Finkenstr. 61, D-4100 Duisburg, FRG
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
449
Lastpage
452
Abstract
CMOS devices have been built on SIMOX substrates. The device characteristics are examined in the temperature range from room remprature up to 300°C. The degradation of the threshold voltage and the carrier mobility are comparable for bulk-and SOI-devices, but at 300° C the off-state currents of the SOI-devices aCre three orders of magnitude less than those of the bulk counterparts. The capability of SOI-devices for high temperature applications will be shown.
Keywords
Capacitance; Doping; Insulation; Microelectronics; Predictive models; Semiconductor films; Semiconductor process modeling; Silicon; Temperature distribution; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436321
Link To Document