DocumentCode
513934
Title
MBE HEMT-compatible diode lasers
Author
Ebner, J. ; Lary, J.E. ; Elíason, G.W. ; Plant, T.K.
Author_Institution
Electrical and Computer Engineering Department, Oregon State University
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
401
Lastpage
404
Abstract
Preliminary results are presented on the fabrication of a new HEMT-compatible diode laser structure using MBE growth with plane-selective doping. Light emission from the 2-D electron/hole gas junction has been detected and characterized.
Keywords
Charge carrier processes; Crystalline materials; Diode lasers; Doping; Etching; Gallium arsenide; HEMTs; Molecular beam epitaxial growth; Optical device fabrication; Optical pulses;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436333
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