DocumentCode
513937
Title
SiC pn structures grown by container-free LPE (GF LPE) and semiconductor devices based on these structures
Author
Dmitriev, V.A. ; Morozenko, Ya.V. ; chuk, A.M.Strel ; Chelnokov, V.E. ; Cherenkov, A.E.
Author_Institution
Ioffe Institute, Polytechnicheskaya st. 26, Leningrad, USSR
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
353
Lastpage
356
Abstract
In this paper we consider the growth of SiC pn structures by COF LPE, properties of pn junctions and lastly, parameters of the devices that were designed.
Keywords
Capacitance-voltage characteristics; Charge measurement; Coordinate measuring machines; Current measurement; P-n junctions; Plasma temperature; Semiconductor devices; Silicon carbide; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436342
Link To Document