Title :
SiC pn structures grown by container-free LPE (GF LPE) and semiconductor devices based on these structures
Author :
Dmitriev, V.A. ; Morozenko, Ya.V. ; chuk, A.M.Strel ; Chelnokov, V.E. ; Cherenkov, A.E.
Author_Institution :
Ioffe Institute, Polytechnicheskaya st. 26, Leningrad, USSR
Abstract :
In this paper we consider the growth of SiC pn structures by COF LPE, properties of pn junctions and lastly, parameters of the devices that were designed.
Keywords :
Capacitance-voltage characteristics; Charge measurement; Coordinate measuring machines; Current measurement; P-n junctions; Plasma temperature; Semiconductor devices; Silicon carbide; Temperature dependence; Temperature distribution;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
