Title :
An Investigation into the Effects of RTA Processing on Low Frequency Noise and Other Characteristics of CMOS FETs
Author :
Murray, D.C. ; Carter, J.C. ; Evans, A.G.R. ; Gougam, A. ; Altrip, J.L
Author_Institution :
Dept. of Electronics and Computer Science, The University, Southampton, SO9 5NH, England.
Abstract :
CMOS devices fabricated with a rapid thermal anneal source and drain activation have been compared with similar devices fabricated with a standard furnace anneal. Measurements have been made of low frequency noise, average interface state density, channel mobility, threshold voltage and bulk states using DLTS. Results show that in some instances RTA can have a deleterious effect on device performance that appears to be due to the rapid rates of cooling that can occur when using this techology.
Keywords :
CMOS process; Density measurement; FETs; Frequency measurement; Furnaces; Interface states; Low-frequency noise; Noise measurement; Rapid thermal annealing; Rapid thermal processing;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
